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| BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE Symbol VCEO 65 45 30 VCBO 80 50 30 VEBO BC846 BC847, BC850 BC848, BC849 Collector Current - Continuous IC 6.0 6.0 5.0 100 mAdc Vdc Vdc 1 2 * Pb-Free Packages are Available * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model: >4000 V ESD Rating - Machine Model: >400 V MAXIMUM RATINGS Rating Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 Collector-Base Voltage BC846 BC847, BC850 BC848, BC849 Emitter-Base Voltage Value Unit Vdc 2 EMITTER 3 SOT-23 CASE 318 STYLE 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM xxD THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW xx D = Specific Device Code = Date Code 1.8 RqJA PD 556 300 mW/C C/W mW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 2.4 RqJA TJ, Tstg 417 -55 to +150 mW/C C/W C Preferred devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2004 1 June, 2004 - Rev. 6 Publication Order Number: BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector -Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector -Base Breakdown Voltage (IC = 10 mA) Emitter -Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE - - - 110 200 420 - - - - 580 - 90 150 270 180 290 520 - - 0.7 0.9 660 - - - - 220 450 800 0.25 0.6 - - 700 770 V V mV - BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 - - - - - - - - - - - - - - - - - - - - - - - - - - - - 15 5.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V ICBO nA mA (IC = 2.0 mA, VCE = 5.0 V) Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base -Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base -Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base -Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF 100 - - - - - - - - 4.5 10 4.0 MHz pF dB Figure 1. http://onsemi.com 2 BC846ALT1 Series BC847, BC848, BC849, BC850 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V Figure 1. Normalized DC Current Gain 2.0 TA = 25C 1.6 IC = 200 mA 1.2 0.8 0.4 0 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 1.0 Figure 2. "Saturation" and "On" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/ C) -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 3.0 Cob 2.0 Cib TA = 25C 400 300 200 Figure 4. Base-Emitter Temperature Coefficient 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25C 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC846ALT1 Series BC846 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 0.2 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 50 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 200 VBE @ VCE = 5.0 V Figure 7. DC Current Gain 2.0 TA = 25C 1.6 20 mA 1.2 0.8 0.4 0 IC = 10 mA 50 mA 100 mA 200 mA -1.0 -1.4 -1.8 Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VB, TEMPERATURE COEFFICIENT (mV/ C) qVB for VBE -2.2 -2.6 -3.0 -55C to 125C 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0.2 0.5 50 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient TA = 25C C, CAPACITANCE (pF) 20 Cib f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 500 200 100 50 20 VCE = 5 V TA = 25C 10 6.0 4.0 Cob 2.0 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 BC846ALT1 Series ORDERING INFORMATION Device BC846ALT1 BC846ALT3 BC846BLT1 BC846BLT3 BC847ALT1 BC847ALT1G BC847BLT1 BC847CLT1 BC847CLT1G BC847CLT3 BC847CLT3G BC848ALT1 BC848ALT1G BC848BLT1 BC848BLT3 BC848CLT1 BC848CLT1G BC849BLT1 BC849BLT3 BC849CLT1 BC849CLT1G BC850BLT1 BC850CLT1 BC850CLT1G Marking 1A 1A 1B 1B 1E 1E 1F 1G 1G 1G 1G 1J 1J 1K 1K 1L 1L 2B 2B 2C 2C 2F 2G 2G Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 (Pb-Free) 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel Shipping 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC846ALT1 Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AI A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. 2 3 1 B S DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BC846ALT1/D |
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